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FIB-SEM

pic37Application:

Ion mill into a feature, then use ultra high-resolution SEM imaging to characterize the defect, or ion mill to prepare sample for lift-out. A FIB-SEM system uses a beam of Ga+ ion to mill into the surface to locate a feature or defect of interest. The integrated SEM then uses a focused beam of electrons to image the sample in the chamber. After identifying the location of a feature or defect, FIB-SEM is used to cross-section the defect with the FIB and examine it with the SEM. This allows sectioning step by step through the defect area and determining the layers affected by the defect. FIB-SEM produces data images at 0.8 nm spatial resolution. Global uses of FIB-SEM include production control, materials development, quality control, problem solving, failure analysis, reverse engineering, data storage, and optics.

NanoScale imaging using FIB-SEM

After identifying the location of a feature or defect, FIB-SEM is used to cross-section the defect with the FIB and examine it with the SEM. This allows sectioning step by step through the defect area and determining the layers affected by the defect. FIB-SEM produces data images at 0.8 nm spatial resolution. Global uses of FIB-SEM include production control, materials development, quality control, problem solving, failure analysis, reverse engineering, data storage, and optics.

Specification:

  • 0.8 nm @ 15 kV electrons
  • 0.9 nm @ 1 kV electrons
  • 50V-30 kV landing voltage electron
  • 4.5 nm @ 30 kV Ga ions
  • 1.5-65 pA Ga ions
  • 100mm diameter x 8 mm in Z
  •  Excellent grain contrast imaging • The Helios NanoLab 400 includes a five-axis stage with 100 mm of travel in X and Y. All-axis piezo drive and chamber mounting provide industry-leading stage repeatability. Samples up to 100 mm can be introduced through the load lock for optimal throughput. Larger samples may be accommodated (with limited travel) through the chamber door.

pic36Application:

  • Prep of STEM/TEM lamella
  • Cross-section inspections
  • Failure analysis
  • Imaging
  • Size analysis
  • Using the FIB, cut the sample, then use the SEM to locate and image any defect
  • Cut a thin slice (30-50 nm), then lift it out, then image it using TEM/STEM with EDS/EELS to measure the chemistry

Strengths and Advantages:

  • 0.8 nm @ 15 kV electrons
  • 0.9 nm @ 1 kV electrons
  • 50V-30 kV landing voltage electron
  • 4.5 nm @ 30 kV Ga ions
  • 1.5-65 pA Ga ions
  • 100 mm diameter x 8 mm in Z
  • Excellent grain contrast imaging

Routine Uses:

  • Prep of STEM/TEM lamella
  • Cross-section inspections
  • Failure analysis
  • Imaging
  • Size analysis
  • Zeiss Auriga FIBSEM crossbeam workstation

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Applications of FIB-SEM:

  • Using the FIB, cut the sample, then use the SEM to locate and image any defect
  • Cut a thin slice (30-50 nm), then lift it out, then image it using TEM/STEM with EDS/EELS to measure the chemistry

The Helios NanoLab 400 includes a five-axis stage with 100 mm of travel in X and Y. All-axis piezo drive and chamber mounting provide industry-leading stage repeatability. Samples up to 100 mm can be introduced through the load lock for optimal throughput. Larger samples may be accommodated (with limited travel) through the chamber door.